BUT30v npn transistor power module n npn transistor n high current power bipolar module n very low r th junction case n specified accidental overload areas n isolated case (2500v rms) n easy to mount n low internal parasitic inductance applications: n motor control n smps & ups n welding equipment internal schematic diagram july 1997 isotop pin 4 not con nected absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -5 v) 200 v v ceo(sus) collector-emitter voltage (i b = 0) 125 v v ebo emitter-base voltage (i c =0) 7 v i c collector current 100 a i cm collector peak current (t p = 10 ms) 150 a i b base current 20 a i bm base peak current (t p =10ms) 30 a p tot total dissipation at t c =25 o c 250 w t stg storage temperature -55 to 150 o c t j max. operating junction temperature 150 o c v iso insulation withstand voltage (ac-rms) 2500 v 1/7
thermal data r thj-case r thc-h thermal resistance junction-case max thermal resistance case-heatsink with conductive grease applied max 0.5 0.05 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be =5 w ) v ce =v cev v ce =v cev t j =100 o c 1 5 ma ma i cev collector cut-off current (v be =-5v) v ce =v cev v ce =v cev t j =100 o c 1 4 ma ma i ebo emitter cut-off current (i c =0) v eb =5v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c =0.2a l=25mh v clamp = 125 v 125 v h fe * dc current gain i c =100a v ce =5v 27 v ce(sat) * collector-emitter saturation voltage i c =50a i b =2.5a i c =50a i b =2.5a t j =100 o c i c =100a i b =10a i c =100a i b =10a t j =100 o c 0.45 0.55 0.7 0.9 0.9 1.2 0.9 1.5 v v v v v be(s at) * base-emitter saturation voltage i c =50a i b =2.5a i c =50a i b =2.5a t j =100 o c i c =100a i b =10a i c =100a i b =10a t j =100 o c 1.15 1.1 1.45 1.55 1.4 1.4 1.8 1.9 v v v v di c /dt rate of rise of on-state collector v cc =300v r c =0 t p =3 m s i b1 =15a t j =100 o c 270 350 a/ m s v ce (3 m s) ? ? collector-emitter dynamic voltage v cc =300v r c =1 w i b1 =15a t j =100 o c 2.7 3.5 v v ce (5 m s) ? ? collector-emitter dynamic voltage v cc =300v r c =1 w i b1 =15a t j =100 o c 22.5v t s t f t c storage time fall time cross-over time i c =100a v cc =90v v bb =-5v r bb =0.47 w v clamp = 125 v i b1 =10a l=45 m ht j =100 o c 1 0.1 0.2 2 0.2 0.35 m s m s m s v cew maximum collector emitter voltage without snubber i cwoff =150a i b1 =10a v bb =-5v v cc =90v l=30 m hr bb =0.5 w t j = 125 o c 125 v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % BUT30v 2/7
safe operating areas derating curve collector emitter saturation voltage thermal impedance collector-emitter voltage versus base-emitter resistance base-emitter saturation voltage BUT30v 3/7
reverse biased soa reverse biased aoa switching times inductive load foward biased soa forward biased aoa switching times inductive load versus temperature BUT30v 4/7
(1) fast electronic switch (2) non-inductive load dc current gain turn-on switching test circuit turn-on switching waveforms turn-off switching test circuit (1) fast electronic switch (2) non-inductive load (3) fast recovery rectifier turn-off switching waveforms BUT30v 5/7
dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.466 0.480 b 8.9 9.1 0.350 0.358 c 1.95 2.05 0.076 0.080 d 0.75 0.85 0.029 0.033 e 12.6 12.8 0.496 0.503 f 25.15 25.5 0.990 1.003 g 31.5 31.7 1.240 1.248 h 4 0.157 j 4.1 4.3 0.161 0.169 k 14.9 15.1 0.586 0.594 l 30.1 30.3 1.185 1.193 m 37.8 38.2 1.488 1.503 n 4 0.157 o 7.8 8.2 0.307 0.322 b e h o n j k l m f a c g d isotop mechanical data BUT30v 6/7
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada- china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... BUT30v 7/7
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